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机译:低电阻钨用于32 nm节点MOL触点及更高
Hudson Valley Research Park, Bldg. 300 - Office 3D5-24, 2070 Route 52, Hopewell Junction, NY 12533, United States;
IBM Semiconductor Research and Development Center (SRDC), Microelectronics Division Hopewell Junction, NY 12533, United States;
GLOBALFOUNDRIES Inc. at IBM Semiconductor Research and Development Center (SRDC), Microelectronics Division Hopewell Junction, NY 12533, United States;
Samsung Electronics at IBM Semiconductor Research and Development Center (SRDC), Microelectronics Division Hopewell Junction, NY 12533, United States;
IBM Semiconductor Research and Development Center (SRDC), Microelectronics Division Hopewell Junction, NY 12533, United States;
IBM Semiconductor Research and Development Center (SRDC), Microelectronics Division Hopewell Junction, NY 12533, United States;
IBM Semiconductor Research and Development Center (SRDC), Microelectronics Division Hopewell Junction, NY 12533, United States;
IBM Semiconductor Research and Development Center (SRDC), Microelectronics Division Hopewell Junction, NY 12533, United States;
contacts; W; low resistivity; resistance;
机译:使用电阻回流工艺的32 nm节点随机接触孔阵列的临界尺寸控制
机译:32 nm节点任意图案的抗蚀剂回流工艺
机译:用于32 nm互补金属氧化物半导体器件的具有乙硼烷还原钨原子层沉积法的低电阻成核层的新型接触插拔工艺
机译:用于32个NM技术节点MOL CAS的低电阻率Tungsten
机译:低电阻率的锗硅化物接触层形成了用于纳米级CMOS的磷掺杂的硅锗合金源/漏结。
机译:通过微波等离子体增强CVD的低电阻率Si的选择性生长和接触间隙填充
机译:193 nm接触孔的优化抵抗100nm节点。
机译:低温电阻欧姆接触中等掺杂的n-Gaas,低温处理