METHODS FOR DEPOSITING ULTRA THIN LOW RESISTIVITY TUNGSTEN FILM FOR SMALL CRITICAL DIMENSION CONTACTS AND INTERCONNECTS

摘要

The High Tungsten provides a method of filling a void-free aspect ratio features. According to various embodiments, the method includes a chemical vapor deposition (CVD) process of the reduced temperature in order to charge the features of tungsten. In certain embodiments, the process temperature is maintained at less than about 350 during chemical vapor deposition in order to charge the feature. Reduced-CVD tungsten charge of temperature provides an improved charged tungsten in high aspect ratio features, provides improved barrier about the fluorine moves to the following layer, to achieve a thin film resistivity similar to the standard CVD charge. In addition, low-tungsten is provided a thin film forming method having the resistivity. According to various embodiments, the method to perform the low-resistivity processing of the lowered temperature to the nucleation layer deposited prior to the bulk layer deposition followed by a CVD process with a high temperature CVD process of the tungsten bulk layer deposition and / or reduced temperature It includes.