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Realization and characterization of surface micromachined tunable band stop CSRR filter using MEMS bridges on silicon substrate

机译:使用硅衬底上的MEMS桥实现表面微机械可调带阻CSRR滤波器的实现和表征

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The paper presents design, fabrication and characterization of a tunable filter on silicon substrate using Complementary Split Ring Resonators (CSRRs) and Radio Frequency Micro Electro-Mechanical System (RF MEMS) variable capacitor. CSRRs are designed on signal line, as well as both ground planes of the Coplanar Waveguide (CPW). Detailed design of such a filter has been already reported by the authors (B. Pradhan and B. Gupta, 2014). In continuation of B. Pradhan and B. Gupta (2014), this paper presents an overview of the fabrication process of the design and its RF, electromechanical and mechanical measurements. The device is fabricated using surface micromachining process with a sacrificial layer. Generally, S1813 and other positive photo-resists are used for this purpose. But in that case the fabrication process becomes more time and cost consuming, since it involves more number of fabrication steps. Hence we use negative SU8 photo-resist as sacrificial layer, resulting in a more efficient fabrications process. It is removed with the help of Propylene Glycol Monomethyl Ether Acetate (PGMEA) solution and then the device rinsed in low surface tension liquid to avoid stiction during beam release. Through electrostatic actuation of the RF-MEMS switch, the RF characteristics of the filter are modified, so that its resonance frequency is tuned. The simulated and measured rejection of stop bands are around -20.19 dB and -31.9 dB for down state around the centre frequency 35.32 GHz & 35.26 GHz and -18.29 dB and -32.02 dB for up state around the centre frequency 38.80 GHz & 38.73 GHz. Modal analysis of the fixed-fixed beam is verified using as Scanning Laser Doppler Vibrometer (LDV).
机译:本文介绍了使用互补开口环谐振器(CSRR)和射频微机电系统(RF MEMS)可变电容器的硅基板上可调滤波器的设计,制造和表征。 CSRR设计在信号线以及共面波导(CPW)的两个接地平面上。作者已经报告了这种过滤器的详细设计(B. Pradhan和B. Gupta,2014)。在B. Pradhan和B. Gupta(2014)的续篇中,本文概述了该设计的制造过程及其RF,机电和机械测量。使用具有牺牲层的表面微加工工艺来制造该器件。通常,S1813和其他正性光刻胶用于此目的。但是在那种情况下,制造过程变得更多的时间和成本消耗,因为它涉及更多数量的制造步骤。因此,我们使用负SU8光刻胶作为牺牲层,从而实现了更有效的制造工艺。借助丙二醇单甲醚乙酸酯(PGMEA)溶液将其除去,然后在低表面张力的液体中冲洗设备,以避免束释放期间发生粘连。通过RF-MEMS开关的静电驱动,可以修改滤波器的RF特性,从而调整其谐振频率。对于中心频率35.32 GHz和35.26 GHz附近的下降状态,仿真和测得的阻带抑制约为-20.19 dB和-31.9 dB,对于中心频率38.80 GHz和38.73 GHz附近的上升状态,阻带的阻带分​​别为-20.19 dB和-31.9 dB。使用扫描激光多普勒振动计(LDV)验证了固定光束的模态分析。

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