Electrical characteristics of Ge buried channel FinFETs with interfacial layers treated by F/N/H-based plasma

摘要

Electrical characteristics of Ge buried channel FinFETs with interfacial layer (IL) treated by CF4, NH3, and H-2 plasma were studied in this work. Although Ge buried channel and plasma treatments on ILs have been reported, their applications on FinFETs are not seen. Experimental results show that higher on-current and on/off current ratio of FinFETs are achieved by CF4 plasma treatment owing to higher fraction of the tetragonal HfO2. FinFETs with NH3 and H-2 plasma treatments show smaller subthreshold swing values and better reliability characteristics. The improvement may be attributed to the ILs with good quality. (C) 2017 Elsevier B.V. All rights reserved.