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Fabrication of photonic integrated circuits in silicon nitride using substrate conformal imprint lithography

机译:使用衬底保形压印光刻技术在氮化硅中制造光子集成电路

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The feasibility of nanoimprint lithography as an alternative strategy for the pattern definition of Si3N4 based PIC (photonic integrated circuit) is demonstrated in this study. The PICs were patterned by the substrate conformal imprint lithography (SCIL), a variation of UV nanoimprint lithography. The optical quality of the patterned PICs was determined by measuring the optical transmission losses of the fabricated PICs. The quality was then compared with the PICs patterned by an optical stepper. The analysis shows that the optical quality of the patterns fabricated by the SCIL process is similar to the patterns defined by an optical stepper. Our study demonstrates clearly that the SCIL is an alternative to established lithographic approaches in regards to material or pattern resolution. (C) 2017 Elsevier B.V. All rights reserved.
机译:这项研究证明了纳米压印光刻技术作为基于Si3N4的PIC(光子集成电路)的图案定义的替代策略的可行性。 PIC通过基板共形压印光刻(SCIL)图案化,这是UV纳米压印光刻的一种形式。通过测量所制造的PIC的光传输损耗来确定图案化的PIC的光学质量。然后将质量与通过光学步进器图案化的PIC进行比较。分析表明,通过SCIL工艺制造的图案的光学质量类似于光学步进器定义的图案。我们的研究清楚地表明,就材料或图案分辨率而言,SCIL可以替代既定的光刻方法。 (C)2017 Elsevier B.V.保留所有权利。

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