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Test Challenges in Nanometric CMOS Technologies

机译:纳米CMOS技术的测试挑战

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The current trends in decreasing the minimum feature sizes in CMOS technologies are producing new failure mechanisms for which the classical test methods become inefficient. This situation causes a growing concern in the design and test communities due to the fact that the advances in integration advance faster than the ability of test specialists in providing the required strategies to test the new circuits. If the current levels of reliability are to be maintained new paradigms to guarantee the quality levels of the future megatransitor chips will be required. In this paper, after reviewing the technology trends in CMOS technologies, the emerging failure mechanisms of these technologies are analyzed. The challenges facing testing in nanometric technologies are explored in terms of voltage test difficulties as well as current test (IDDQ) problems and solutions.
机译:减小CMOS技术中最小特征尺寸的当前趋势正在产生新的故障机制,传统的测试方法对此无效。由于集成的进步比测试专家提供所需的策略来测试新电路的能力要快,因此这种情况在设计和测试社区引起了越来越多的关注。如果要维持当前的可靠性水平,将需要新的范式来保证未来大型收发器芯片的质量水平。本文在回顾了CMOS技术的发展趋势之后,分析了这些技术的新兴失效机理。从电压测试困难以及电流测试(IDDQ)问题和解决方案方面探讨了纳米技术中测试所面临的挑战。

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