GaAs-Based Single Electron Logic and Memory Devices Using Electro-Deposited Nanometer Schottky Gates

摘要

A series of single electron logic and memory devices based on Schottky in-plane gate (IPG) quantum wire transistor (QWTR) structure are proposed and their feasibilities are investigated. Basic QWTR devices showed excellent V_th controllability. Multi-dot single electron transistors showed voltage gains larger than unity, showing feasibily for logic applications. Feasibility of a novel single electron memory device using electro-deposited metal dots was demonstrated.