Modeling and simulation of membrane distortions in Next Generation Lithography (NGL) masks

摘要

Next Generation Lithographies will face major challenges to meet the allotted error budgets for sub-130 nm technologies. The development of low distortion masks will be essential. Using comprehensive finite element simulation models, mask distortions can be efficiently and accurately predicted. Pattern-specific distortions have been evaluated to investigate pattern placement accuracy and stability. For the three principal membrane mask technologies, typical pattern-transfer results are presented.