Experimental verification of different slip generation models for 300 mm wafers processed in a fast ramp vertical furnace

摘要

This paper presents the results of 300 mm wafer slip tests conducted using Semitool's 300 mm Express furnace at process temperatures ranging from 900℃ to 1150℃. X-ray diffraction topography is used to search for the presence of dislocations in the processed wafers. The experimental data is evaluated against the predictions of the wafer stress analysis code MacWafer/PCWafer [R. Nilson, S. Griffiths, MacWafer Computer Software, Sandia National Laboratories, Livermore, CA 94551-0969]. This code enables the application and evaluation of different slip generation models [M. Schrems et al., in: H.R. Huff, W Bergholz, K. Sumino (Eds.), Semiconductor Silicon ’94, The Electrochemical Society, N.J., 1994, PP. 1050-1063; B. Leroy, C. Plougonven, J. Electrochemical Society 127 (4) (1980) 961--9701. Instances of wafer slip are observed only at wafer support points. The occurrence of wafer slip is best described by the model attributable to reference [B. Leroy, C. Plougonven, J. Electrochemical Society 127 (4) (1980) 961-970 (1980)] assuming an oxygen precipitation level of about 4 ppm.