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Three-axes monolithic silicon low-g accelerometer

机译:三轴单片硅低重力加速度计

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摘要

In this paper, four different designs for a new three-axes monolithic low-g acceleration sensor are presented. The silicon spring mass system of the sensor is fabricated in a single step by anisotropic wet chemical etching in KOH using [111] planes as physical etch stop. The orientation of the supporting beams of the spring-mass systems allows the seismic mass to move in a direction orthogonal to the [111] planes. Four mass-spring systems, each one rotated by 90/spl deg/, enables the detection of three components of the acceleration vector using capacitive readout. Two alignment structures are presented meeting the high requirements in terms of mask alignment, which are necessary when using the described etch technique. A new space saving compensation structure protecting the convex edges of the seismic masses during the etch process was realized and compared with standard solutions. The sensors performance was characterized and is demonstrated.
机译:本文针对新型三轴单片式低重力加速度传感器提出了四种不同的设计。使用[111]平面作为物理蚀刻停止层,通过在KOH中进行各向异性湿化学蚀刻,一步一步制造出传感器的硅弹簧质量系统。弹簧质量系统的支撑梁的方向允许地震质量沿垂直于[111]平面的方向移动。四个质量弹簧系统,每个系统旋转90 / spl deg /,可以使用电容性读数检测加速度矢量的三个分量。提出了两种对准结构,它们满足了掩模对准方面的高要求,这在使用所描述的蚀刻技术时是必需的。实现了一种新型的节省空间的补偿结构,该结构可在蚀刻过程中保护地震块的凸边,并与标准解决方案进行比较。对传感器性能进行了表征和演示。

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