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首页> 外文期刊>Journal of Microelectromechanical Systems >Evaluation of Mode Dependent Fluid Damping in a High Frequency Drumhead Microresonator
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Evaluation of Mode Dependent Fluid Damping in a High Frequency Drumhead Microresonator

机译:高频鼓面微谐振器中与模式有关的流体阻尼的评估

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摘要

Design of high quality factor $(Q)$ micromechanical resonators depends critically on our understanding of energy losses in their oscillations. The $Q$ of such structures depends on process induced prestress in the structural geometry, interaction with the external environment, and the encapsulation method. We study the dominant fluid interaction related losses, namely, the squeeze film damping and acoustic radiation losses in a drumhead microresonator subjected to different prestress levels, operated in air, to predict its $Q$ in various modes of oscillation. We present a detailed research of the acoustic radiation losses, associated with the 15 transverse vibration modes of the resonator using a hybrid analytical-computational approach. The prestressed squeeze film computation is based on the standard established numerical procedure. Our technique of computing acoustic damping based quality factor ${Q}_{rm ac}$ includes calculation of the exact prestressed modes. We find that acoustic losses result in a non-monotonic variation of ${Q}_{rm ac}$ in lower unstressed modes. Such non-monotonic variation disappears with the increase in the prestress levels. Although squeeze film damping dominates the net ${Q}$ at lower frequencies, acoustic radiation losses dominate at higher frequencies. The combined computed losses correctly predict the experimentally measured ${Q}$ of the resonator over a large range of resonant frequencies. $hfill[{2013hbox{-}0035}]$
机译:高品质因数(Q)$微机械谐振器的设计关键取决于我们对振荡能量损耗的理解。这种结构的$ Q $取决于过程在结构几何形状中引起的预应力,与外部环境的相互作用以及封装方法。我们研究了与流体相互作用有关的主要损耗,即在空气中操作的,受不同预应力作用的鼓面微谐振器中的挤压膜阻尼和声辐射损耗,以预测其在各种振荡模式下的$ Q $。我们使用混合分析计算方法,对与共鸣器的15种横向振动模式有关的声辐射损耗进行了详细研究。预应力挤压膜的计算基于标准建立的数值程序。我们基于声学阻尼的质量因数$ {Q} _ {rm ac} $的计算技术包括精确预应力模式的计算。我们发现,在较低的无应力模式下,声损耗导致$ {Q} _ {rm ac} $的非单调变化。这种非单调变化随着预应力水平的增加而消失。尽管压缩膜阻尼在较低频率下主导净$ {Q} $,但在较高频率下声辐射损耗占主导。组合的计算损耗正确地预测了在大范围的谐振频率上谐振器的实验测量值{{}}。 $ hfill [{2013hbox {-} 0035}] $

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