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首页> 外文期刊>Journal of Microelectromechanical Systems >Design and Development of the MEMS-Based High-g Acceleration Threshold Switch
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Design and Development of the MEMS-Based High-g Acceleration Threshold Switch

机译:基于MEMS的高G加速阈值开关的设计与开发

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摘要

The paper describes the design, simulation and fabrication of a micro-electromechanical system (MEMS) based acceleration threshold switch with an independent angled latching mechanism. The switch is designed to operate in critical applications wherein power cannot be applied. It is a passive device that does not require power for retention of its mechanical state and mechanical memory. The switch consists of a serpentine spring-mass system with an independent angled latching mechanism and multiple contacts. Stoppers were used to limit displacement in the lateral direction and provide a guided path in the line of action to the proof mass. A transient analysis was performed to study non-linear behaviour of the switch. The latching threshold value was determined analytically based on the geometry of the switch. The switch was fabricated on an SOI (silicon-on-insulator) wafer having 25 mu m thick device layer and 400 mu m handle wafer. The switch was given a static mechanical shock of 3500g to observe its behaviour under shock. Contact resistance of the switch was approximately 2 Omega in the ON position and more than 100 M Omega in OFF position. The theoretical and simulated results were in good agreement with the experimental results.
机译:本文介绍了基于微机电系统(MEMS)的加速度阈值开关的设计,仿真和制造,其具有独立的角度锁定机构。该开关设计用于在关键应用中操作,其中不能应用电源。它是一种无源装置,不需要能够保持其机械状态和机械存储器的功率。该开关由蛇形弹簧质量系统组成,具有独立的角度锁定机构和多个触点。塞子用于限制横向方向上的位移,并在动作线上提供对抗质量的引导路径。进行瞬态分析以研究交换机的非线性行为。基于交换机的几何形状分析地确定锁存阈值。该开关在具有25μm厚的装置层和400μm手柄晶片的SOI(硅 - 镶嵌着绝缘体)晶片上制造。开关静态机械冲击3500g以观察其在休克下的行为。开关的接触电阻在接通位置约为2个Omomga,超过100米Omega的位置。理论和模拟结果与实验结果吻合良好。

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