机译:硅上超高纵横比微结构的均匀金属辅助化学蚀刻
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA;
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA;
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA|Southeast Univ, Sch Mat Sci & Engn, Nanjing 211189, Jiangsu, Peoples R China;
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA|Guangdong Univ Technol, Sch Electromech Engn, Guangzhou 510006, Guangdong, Peoples R China|Minist Educ, Key Lab Mech Equipment Mfg & Control Technol, Guangzhou 510006, Guangdong, Peoples R China;
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA|Shandong Univ, State Key Lab Crystal Mat, Jinan 250100, Peoples R China;
Georgia Inst Technol, Sch Mat Sci & Engn, Atlanta, GA 30332 USA|Chinese Univ Hong Kong, Dept Elect Engn, Hong Kong, Peoples R China;
Metal-assisted chemical etching; silicon wet etch; high aspect ratio;
机译:具有均匀金属辅助化学蚀刻的硅具有多功能倾斜角度的高纵横比微结构
机译:使用嵌段共聚物光刻技术和金属辅助刻蚀技术制造的超高纵横比硅纳米线的密集排列阵列
机译:通过电偏流金属辅助化学蚀刻(EMaCE)对单晶硅和多晶硅进行高速,高纵横比,高均匀性和3D复杂性的深度蚀刻
机译:通过均匀金属辅助化学蚀刻(MaCE)通过宽直径的硅通孔(TSV)形成高纵横比
机译:作为3D纳米制造平台的硅金属辅助化学蚀刻的开发。
机译:从硅工程到多孔硅和硅金属辅助化学刻蚀的纳米线:Ag的大小和作用电子清除率对形貌控制及机理的影响
机译:使用金属辅助化学蚀刻的大规模合成高度均匀的硅纳米线阵列