Implementing SiGe technology to produce heterojunction bipolar transistors

摘要

The development of a low-temperature UHV/CVD technique for depositing epitaxial silicon has made it possible to implement high-yield production of SiGe heterojunction bipolar transistors.. The addition of germanium to silicon technologies to form silicon germanium (SiGe) devices has created a revolution in the semiconductor industry. Germanium is added to silicon to form high-performance heterojunction bipolar transistors (HBTs), which can operate at much higher speeds than standard silicon bipolar transistors.