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IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

召开年：2018
召开地：Anaheim(US)
出版时间：-

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1.< 0.8dB IL 46dBm OIP3 Ka band SPDT for 5G communication

机译：<0.8dB IL 46dBm OIP3 Ka频段SPDT，用于5G通信
- 作者：Chaojiang Li;Berktug Ustundag;Arvind Kumar;Myra Boenke;Umut Kodak;Gabriel Rebeiz
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
2.30 Frequency-tuning-range 60 GHz push-push VCO in 28 nm bulk CMOS technology

机译：采用28 nm批量CMOS技术的30％频率调谐范围60 GHz推压VCO
- 作者：Johannes Rimmelspacher;Robert Weigel;Amelie Hagelauer;Vadim Issakov
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Voltage-controlled oscillators;
- CMOS technology;
- Tuning;
- Phase noise;
- Harmonic analysis;
- Metals;
- Power measurement;
3.A 1.8-mW low power, PVT-resilient, high linearity, modified Gilbert-cell down-conversion mixer in 28-nm CMOS

机译：具有1.8mW低功耗，PVT弹性，高线性度的改进型Gilbert单元下变频混频器，采用28nm CMOS工艺
- 作者：R. Ciocoveanu;J. Rimmelspacher;R. Weigel;A. Hagelauer;V. Issakov
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Mixers;
- Gain;
- Linearity;
- Transistors;
- CMOS technology;
- Radio frequency;
- Voltage measurement;
4.A 120 GHz wideband low-power down converter for wireless chip-to-chip communication

机译：用于无线芯片间通信的120 GHz宽带低功耗下变频器
- 作者：Chae Jun Lee;Hee Sung Lee;Seung Hun Kim;Tae Hwan Jang;Dong Min Kang;Hyuk Su Son;Chul Woo Byeon;Chul Soon Park
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Gain;
- Mixers;
- Baluns;
- Baseband;
- Bandwidth;
- Radio frequency;
- Gain measurement;
5.A low-power K-band Colpitts VCO with 30 tuning range in a 130 nm SiGe BiCMOS technology

机译：在130 nm SiGe BiCMOS技术中具有30％调谐范围的低功耗K波段Colpitts VCO
- 作者：Farabi Ibne Jamal;Jan Wessel;Dietmar Kissinger
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Voltage-controlled oscillators;
- Tuning;
- Silicon germanium;
- Capacitance;
- Phase noise;
- Power generation;
6.A low-power VCSEL driver in a complementary SiGe:C BiCMOS technology

机译：互补SiGe：C BiCMOS技术中的低功耗VCSEL驱动器
- 作者：Minsu Ko;Ahmet Cagri Ulusoy;Dietmar Kissinger
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
7.A 65nm CMOS 6–18 GHz full 360° 6-bit phase shifter

机译：65nm CMOS 6–18 GHz全360°6位移相器
- 作者：Jin-Tao Hu;Wei Li;Lai He;Shi-sheng Liu;Yuan-yuan Xu;Jie Gong
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Phase shifters;
- Gain;
- CMOS technology;
- Phase measurement;
- Phased arrays;
- Switches;
- Measurement uncertainty;
8.E-band reflection-type phase shifter with uniform insertion loss

机译：插入损耗均匀的E波段反射型移相器
- 作者：Roee Ben Yishay;Danny Elad
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Phase shifters;
- Couplers;
- Temperature measurement;
- Silicon germanium;
- Phased arrays;
- BiCMOS integrated circuits;
- Insertion loss;
9.A low power CMOS temperature sensor frontend for RFID tags

机译：用于RFID标签的低功耗CMOS温度传感器前端
- 作者：Hengying Shan;John Peterson;Ming-Shiuan Tsai;Yingheng Tang;Nathan J. Conrad;Saeed Mohammadi
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
10.Layout based electro-thermal simulation setup

机译：基于布局的电热仿真设置
- 作者：Falk Korndörfer;Anton Datsuk;Mehmet Kaynak
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
11.High voltage LDMOS inverter for on-chip RF-MEMS actuation

机译：用于片上RF-MEMS驱动的高压LDMOS逆变器
- 作者：C. Wipf;R. Sorge;A. Göritz;S. Tolunay Wipf;A. Scheit;D. Kissinger;M Kaynak
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Inverters;
- Switches;
- Charge pumps;
- BiCMOS integrated circuits;
- Voltage measurement;
- Micromechanical devices;
- Capacitance;
12.Body assist switch branch design for second harmonic reduction

机译：车身辅助开关支路设计可减少二次谐波
- 作者：Paul Hurwitz;Kurt Moen
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Field effect transistors;
- Switches;
- Harmonic analysis;
- Radio frequency;
- Fingers;
- Logic gates;
- Power harmonic filters;
13.A differential vertical hybrid coupler and low capacitance RF pads for millimeter-wave applications in 28 nm CMOS FDSOI

机译：差分垂直混合耦合器和低电容RF焊盘，用于28 nm CMOS FDSOI中的毫米波应用
- 作者：Florian Voineau;Baudouin Martineau;Mathilde Sié;Anthony Ghiotto;Eric Kerhervé
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Radio frequency;
- Millimeter wave technology;
- Silicon-on-insulator;
- Insertion loss;
- Capacitance;
- Couplings;
- Couplers;
14.RF silicon photonics for wideband, high dynamic range microwave and millimeter-wave signal processing

机译：用于宽带，高动态范围微波和毫米波信号处理的RF硅光子学
- 作者：Navid Hosseinzadeh;Aditya Jain;Roger Helkey;James F. Buckwalter
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Radio frequency;
- Photonics;
- Silicon;
- Optical receivers;
- Optical waveguides;
- Gain;
- Capacitance;
15.Sub-THz interconnect for planar chip-to-chip communications

机译：次太赫兹互连，用于平面芯片间通信
- 作者：Bo Yu;Yu Ye;Xuan Ding;Christian Neher;Xiaoguang Liu;Zhiwei Xu;Qun Jane Gu
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Energy efficiency;
- Bandwidth;
- Wires;
- Integrated circuit interconnections;
- Optical waveguides;
- CMOS technology;
- Bonding;
16.Prediction of noise transit time and noise correlation of SiGe HBTs

机译：SiGe HBT的噪声传播时间和噪声相关性预测
- 作者：Peng Cheng;Hisashi Shichijo
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
17.Broadband variable gain amplifier with low group delay variation

机译：具有低群时延变化的宽带可变增益放大器
- 作者：Christian V. Vangerow;Benjamin Goettel;Ahmed Awny;Dietmar Kissinger;Thomas Zwick
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Gain;
- Delays;
- Transistors;
- Bandwidth;
- Frequency measurement;
- Integrated circuit modeling;
- Gain measurement;
18.A universal monolithic E-band transceiver for automotive radar applications and V2V communication

机译：适用于汽车雷达应用和V2V通信的通用单片E带收发器
- 作者：Maciej Kucharski;Dietmar Kissinger;Herman Jalli Ng
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Radar;
- Transceivers;
- Gain;
- Automotive engineering;
- Mixers;
- Radar antennas;
- Binary phase shift keying;
19.A wideband I/Q RFD AC-based phase modulator

机译：宽带I / Q RFD基于AC的相位调制器
- 作者：Yiyu Shen;Michael Polushkin;Mohammadreza Mehrpoo;Mohsen Hashemi;Earl McCune;Morteza S. Alavi;Leo C. N. de Vreede
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Phase modulation;
- Power harmonic filters;
- Frequency modulation;
- Harmonic analysis;
- Wideband;
- Band-pass filters;
- Phase measurement;
20.A dual-element VNA electronic calibration in CMOS

机译：CMOS中的双元素VNA电子校准
- 作者：Jun-Chau Chien;Amin Arbabian;Ali M. Niknejad
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Calibration;
- Impedance;
- Impedance measurement;
- Standards;
- Reflection;
- Modulation;
- Electrical resistance measurement;
21.A low-power wideband D-band LNA in a 130 nm BiCMOS technology for imaging applications

机译：采用130 nm BiCMOS技术的低功耗宽带D波段LNA，用于成像应用
- 作者：E. Aguilar;A. Hagelauer;D. Kissinger;R. Weigel
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年
- Gain;
- Silicon germanium;
- Transmission line measurements;
- Power demand;
- Power transmission lines;
- Imaging;
- BiCMOS integrated circuits;
22.SiGe heterojunction bipolar transistor technology for sub-mm-wave electronics — state-of-the-art and future prospects

机译：用于亚毫米波电子设备的SiGe异质结双极晶体管技术—最新技术和未来前景
- 作者：M. Schroter;A. Pawlak
- 会议名称：《IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems》 | 2018年