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首页> 外文期刊>Micro & Nano Letters, IET >Effect of current density on silicon surface in electrochemical etching
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Effect of current density on silicon surface in electrochemical etching

机译:电流密度对电化学刻蚀中硅表面的影响

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摘要

A simple and reliable fabrication technique for producing nanoporous filters is presented. The nanoporous filter plays an important role in biomedical microelectromechanical systems applications, especially in filtering out waste and solute from inside human blood. Nanosized components in the biological fluid are filtered using silicon membranes that are controlled by nanosized pores. The technique explored was the electrochemical etching (ECE) process of silicon. This approach starts with thinning the bulk silicon until only several micrometres thick using the KOH process and then carry out ECE to produce pores. The yield of the process was a 3 µm thick nanoporous silicon membrane with pore sizes of less than 100 nm. This physical characteristic enables the membrane to filter all the waste and solute particles of less than 100 nm. Owing to this simple and reliable method, the development of nanoporous silicon membrane can be used in nanofiltration applications especially in an artificial kidney.
机译:提出了一种用于生产纳米多孔过滤器的简单而可靠的制造技术。纳米多孔过滤器在生物医学微机电系统应用中起着重要作用,特别是在从人血中滤除废物和溶质方面。使用由纳米孔控制的硅膜过滤生物流体中的纳米级成分。探索的技术是硅的电化学蚀刻(ECE)工艺。该方法首先使用KOH工艺将体硅减薄至只有几微米厚,然后进行ECE产生孔。该方法的产率为3μm厚的纳米多孔硅膜,其孔径小于100nm。这种物理特性使膜能够过滤所有小于100 nm的废物和溶质颗粒。由于这种简单而可靠的方法,纳米多孔硅膜的开发可用于纳滤应用,尤其是在人造肾脏中。

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