机译:工艺参数对PVT法生长4H-SiC单晶的影响
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Electronic Ceramics Center (ECC), Department of Nano Technology, Dong-Eui University, 995 Eomgwangno, Busanjin-gu, Busan, 614-714, Korea;
Research Institute of Industrial Science and Technology, Pohang, Kyungbuk, 790-600, Korea;
Research Institute of Industrial Science and Technology, Pohang, Kyungbuk, 790-600, Korea;
Research Institute of Industrial Science and Technology, Pohang, Kyungbuk, 790-600, Korea;
sublimation; transformation; temperature gradient; doping levels; hall measurements;
机译:在PVT生长的4H-SiC单晶中通过巨束步骤从TSD到Frank型堆积断层的结构转变
机译:PVT生长的4H-SiC单晶中观察到的位错的复杂行为
机译:PVT生长的4H-SiC单晶中6H型堆垛层错与螺纹位错的相互作用
机译:工艺参数对非晶硅生长4H-SiC单晶的影响。PVT法
机译:X射线形貌技术在PVT生长4H-SiC晶体缺陷行为研究中的应用
机译:单晶4H-SIC等血浆电解处理和机械抛光的组合
机译:通过CF-PVT法在4H-SiC上生长的体积<111> 3C-SiC单晶的表征