机译:在6H-SiC衬底上生长的SiCGe层的异质外延缺陷和光学特性
Department of Electronic Engineering, Xi'an University of Technology, Shaanxi 710048, China;
Department of Electronic Engineering, Xi'an University of Technology, Shaanxi 710048, China;
Department of Electronic Engineering, Xi'an University of Technology, Shaanxi 710048, China;
Department of Electronic Engineering, Xi'an University of Technology, Shaanxi 710048, China;
Department of Electronic Engineering, Xi'an University of Technology, Shaanxi 710048, China;
Department of Electronic Engineering, Xi'an University of Technology, Shaanxi 710048, China;
SiC; SiCGe; photoluminescence;
机译:在6H-SiC上生长SiCGe外延层的缺陷研究
机译:Sn基熔体中6H-SiC衬底上生长的(111)3C-SiC层的VLS的结构和光学研究
机译:具有3层高阶梯形和阶梯形结构的6H-SiC(0001)衬底上生长的2H-AIN中新型缺陷结构的观察
机译:在6H-SiC衬底上生长的SiCGe层的异质外延缺陷和光学特性
机译:在4H和6H碳化硅衬底上生长的砷化硼外延层的生长机理和缺陷结构。
机译:光学相干断层扫描全脸图像中观察到的无红照片中弥漫性视网膜神经纤维层缺损的特征
机译:具有3层高表面台阶的6H-SiC(0001)衬底上生长的AlN层中的螺纹位错阵列的形成机理
机译:siC衬底上生长的外延3C-siC,4H-siC和6H-siC薄膜缺陷的研究