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Hetero-epitaxial defects and optical characteristics of SiCGe layers grown on 6H-SiC substrate

机译:在6H-SiC衬底上生长的SiCGe层的异质外延缺陷和光学特性

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摘要

By means of SEM, TEM, UV-VIS optical transmission spectra and photoluminescence spectra tests, hetero-epitaxial defects and optical characteristics of SiCGe layers grown on 6H-SiC substrate were studied. SEM and TEM images have shown that the SiCGe were grown in layer-by-layer mode with APD and DPB defects which were caused by the thermal and lattice mismatches between SiCGe and SiC. Transmission spectra results have shown the calculated band gap of the SiCGe layer was 2.3 leV. Room temperature photoluminescence spectra have shown that the peak wavelength and the FWHM of SiCGe layer were closely related to its Ge contents and the hetero-epitaxial defects.
机译:通过SEM,TEM,UV-VIS光透射光谱和光致发光光谱测试,研究了在6H-SiC衬底上生长的SiCGe层的异质外延缺陷和光学特性。 SEM和TEM图像显示,SiCGe以APD和DPB缺陷逐层生长,这是由SiCGe和SiC之间的热和晶格失配引起的。透射光谱结果表明,计算出的SiCGe层的带隙为2.3leV。室温光致发光光谱表明,SiCGe层的峰值波长和FWHM与其Ge含量和异质外延缺陷密切相关。

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  • 来源
    《Materials science forum》 |2011年第1期|p.445-448|共4页
  • 作者单位

    Department of Electronic Engineering, Xi'an University of Technology, Shaanxi 710048, China;

    Department of Electronic Engineering, Xi'an University of Technology, Shaanxi 710048, China;

    Department of Electronic Engineering, Xi'an University of Technology, Shaanxi 710048, China;

    Department of Electronic Engineering, Xi'an University of Technology, Shaanxi 710048, China;

    Department of Electronic Engineering, Xi'an University of Technology, Shaanxi 710048, China;

    Department of Electronic Engineering, Xi'an University of Technology, Shaanxi 710048, China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    SiC; SiCGe; photoluminescence;

    机译:碳化硅;SiCGe;光致发光;

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