Low Temperature Photoluminescence Signature of Stacking Faults in 6H-SiC Epilayers Grown on Low Angle Off-axis Substrates

摘要

The radiative recombination spectra of 6H-SiC epilayers grown on low angle (1.4° off-axis) substrates have been investigated by low temperature photoluminescence spectroscopy. Four different types of stacking faults have been identified, together with the presence of 3C-SiC inclusions. From the energies of the momentum-conserving phonons, four excitonic band gap energies Egx have been found to be 2.837, 2.698, 2.600 and 2.525 eV. These photoluminescence features, which give a rapid and non-destructive approach to identify stacking faults in 6H-SiC, provide a direct feedback to improve the material growth.