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机译:双栅沟槽SiC JFET的驱动电路评估
Laboratory of Electrical Energy Conversion, KTH Royal Institute of Technology, Sweden,Institute of Control and Industrial Electronics, Warsaw University of Technology, Poland;
Laboratory of Electrical Energy Conversion, KTH Royal Institute of Technology, Sweden;
Acreo AB, Sweden;
Laboratory of Electrical Energy Conversion, KTH Royal Institute of Technology, Sweden;
SiC JFET; dual-gate trench (DGT) JFET; gate driver; current-source; switching performance;
机译:面向94V效率服务器电源的600V垂直沟槽常关SiC JFET的栅极驱动电压设计
机译:用于雪崩模式下并行连接的SIC-JFET的电流平衡的栅极驱动电路
机译:SiC-JFET器件ZVS操作的最佳栅极驱动电路设计
机译:双栅极沟槽SIC JFET的驱动电路评估
机译:4H-SIC沟槽MOSFET:实用的表面沟道迁移率提取
机译:4H-SIC双沟MOSFET采用分流异质结闸用于改善开关特性
机译:GaN HEMT用于SiC MOSFET的高速栅极驱动电路