Influence of nitrogen implantation on electrical properties of AI/SiO_2/4H- SiC MOS structure

K. Krol; M. Sochacki; M. Turek; J. Zuk; H. M. Przewlocki; T. Gutt; P. Borowicz; M. Guziewicz; J.Szuber; M. Kwoka; P. Koscielniak; J. Szmidt

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Influence of nitrogen implantation on electrical properties of AI/SiO_2/4H- SiC MOS structure

机译：氮注入对AI / SiO_2 / 4H-SiC MOS结构电性能的影响

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An influence of nitrogen implantation dose on the properties of MOS structure is analyzed. The properties are investigated using C-V, I-V measurements, Raman spectroscopy, and XPS profiling. It has been shown that the trap density is directly related to implantation damage and conditions.

机译：分析了氮注入剂量对MOS结构性能的影响。使用C-V，I-V测量，拉曼光谱和XPS分析对特性进行了研究。已经表明，阱的密度与注入损伤和条件直接相关。

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《Materials science forum》 |2013年第2013期|733-736|共4页
作者
K. Krol; M. Sochacki; M. Turek; J. Zuk; H. M. Przewlocki; T. Gutt; P. Borowicz; M. Guziewicz; J.Szuber; M. Kwoka; P. Koscielniak; J. Szmidt;
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Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland,Tele- and Radio Research Institute, Ratuszowa 11, 03-450 Warsaw, Poland;

Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland;

Maria Curie-Sklodowska University, Maria Sklodowska-Curie Sq. 1, 20-031 Lublin, Poland;

Maria Curie-Sklodowska University, Maria Sklodowska-Curie Sq. 1, 20-031 Lublin, Poland;

Institute of Electron Technology, Lotnikow 32/47, 02-668 Warsaw, Poland;

Institute of Electron Technology, Lotnikow 32/47, 02-668 Warsaw, Poland;

Institute of Electron Technology, Lotnikow 32/47, 02-668 Warsaw, Poland, Institute of Physical Chemistry, Kasprzaka 44/52, 01-224 Warsaw, Poland;

Institute of Physical Chemistry, Kasprzaka 44/52, 01-224 Warsaw, Poland;

Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland;

Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland;

Silesian University of Technology, Krzywoustego 2, 44-100 Gliwice, Poland;

Warsaw University of Technology, Koszykowa 75, 00-662 Warsaw, Poland;

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Influence of nitrogen implantation on electrical properties of AI/SiO_2/4H- SiC MOS structure

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