Influence of nitrogen implantation on electrical properties of AI/SiO_2/4H-SiC MOS structure

机译：氮气植入对AI / SiO_2 / 4H-SiC MOS结构电性能的影响

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An influence of nitrogen implantation dose on the properties of MOS structure is analyzed. The properties are investigated using C-V, I-V measurements, Raman spectroscopy, and XPS profiling. It has been shown that the trap density is directly related to implantation damage and conditions.

机译：分析了氮气注入剂量对MOS结构性能的影响。使用C-V，I-V测量，拉曼光谱和XPS分析来研究性质。已经表明，陷阱密度与植入损伤和条件直接相关。

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《European conference on silicon carbide and related materials》|2013年||共4页
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作者
K. Krol; M. Sochacki; M. Turek; J. Zuk; H. M. Przewlocki; T. Gutt; P. Borowicz; M. Guziewicz; J.Szuber; M. Kwoka; P. Koscielniak; J. Szmidt;
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正文语种
中图分类工程材料一般性问题;
关键词
silicon carbide; thermal oxidation; ion implantation; ion implantation damage;

机译：碳化硅;热氧化;离子植入;离子植入损伤;

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专利

1. Influence of nitrogen implantation on electrical properties of AI/SiO_2/4H- SiC MOS structure [J] . K. Krol, M. Sochacki, M. Turek, Materials science forum . 2013,第期

机译：氮注入对AI / SiO_2 / 4H-SiC MOS结构电性能的影响
2. Influence of phosphorus implantation on electrical properties of Al/SiO_2/4H-SiC MOS structure [J] . Krystian Krol, Mariusz Sochacki, Marcin Turek, Materials science forum . 2015,第期

机译：磷注入对Al / SiO_2 / 4H-SiC MOS结构电性能的影响
3. Effect of phosphorus implantation prior to oxidation on electrical properties of thermally grown SiO_2/4H-SiC MOS structures [J] . Aleksey Mikhaylov, Tomasz Sledziewski, Alexey Afanasyev, Materials science forum . 2015,第期

机译：氧化前注入磷对热生长SiO_2 / 4H-SiC MOS结构电性能的影响
4. Influence of nitrogen implantation on electrical properties of AI/SiO_2/4H-SiC MOS structure [C] . K. Krol, M. Sochacki, M. Turek, European conference on silicon carbide and related materials . 2013

机译：氮气植入对AI / SiO_2 / 4H-SiC MOS结构电性能的影响
5. Application of nitrogen ion implantation for improving tribological properties of four modern steels. [D] . Li, Manyuan. 2001

机译：氮离子注入在改善四种现代钢的摩擦学性能中的应用。
6. Nitrogen-doped graphene films from chemical vapor deposition of pyridine: influence of process parameters on the electrical and optical properties [O] . Andrea Capasso, Theodoros Dikonimos, Francesca Sarto, 2015

机译：吡啶化学气相沉积制得的氮掺杂石墨烯薄膜：工艺参数对电学和光学性质的影响
7. Influence of phosphorus implantation on electrical properties of Al/SiO2/4H-SiC MOS structure [O] . Krystian Krol, Mariusz Sochacki, Marcin Turek, 2015

机译：磷注入对al / siO2 / 4H-siC mOs结构电性能的影响

Influence of nitrogen implantation on electrical properties of AI/SiO_2/4H-SiC MOS structure

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