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首页> 外文期刊>Materials science forum >High voltage SiC JBS diodes with multiple zone junction termination extension using single etching step
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High voltage SiC JBS diodes with multiple zone junction termination extension using single etching step

机译：使用单个蚀刻步骤即可扩展多个区域结终止范围的高压SiC JBS二极管

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摘要

A novel variation of lateral etching junction termination extension (VLE-JTE) for Silicon carbide (SiC) power junction barrier Schottky rectifier (JBS) using a single mask is proposed and investigated. Simulation results shows that the breakdown voltage of JBS terminated with VLE-JTE can achieve 6500V, reaching up to more than 95% of parallel-plane junction bulk breakdown. Moreover, it implements a single mask with window areas varying laterally away from the main junction instead of extra ion implantation or etching steps to achieve multiple-zone JTE, making it easier to be implemented in applications.
机译：提出并研究了使用单个掩模的碳化硅（SiC）功率结势垒肖特基整流器（JBS）的横向刻蚀结终止延伸（VLE-JTE）的新变化形式。仿真结果表明，以VLE-JTE端接的JBS的击穿电压可以达到6500V，达到并联面结体击穿的95％以上。此外，它实现了一个单一的掩膜，其窗口区域在远离主结的方向上横向变化，而无需额外的离子注入或蚀刻步骤来实现多区域JTE，从而使其更易于在应用中实现。

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  • 来源
    《Materials science forum》 |2014年第2期|808-811|共4页
  • 作者

    Xiaochuan Deng; Chengyuan Rao; Jin Wei; Huaping Jiang; Miaomiao Chen; Xiangdong Wang; Bo Zhang;

  • 作者单位

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, P. R. China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, P. R. China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, P. R. China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, P. R. China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, P. R. China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, P. R. China;

    State Key Laboratory of Electronic Thin Film and Integrated Devices, University of Electronic Science and Technology of China, P. R. China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Silicon carbide; multiple zone; junction edge termination; breakdown voltage;

    机译：碳化硅;多区域结边缘终止;击穿电压;

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