Study of Etching Processes for SiC Defect Analysis

摘要

We investigated selective etching of SiC in molten KOH + NaOH + Na_2O_2 mixtures in application to defect analysis. Etch rate was measured as a function of etchant composition, temperature and other process variables. Optimal etching conditions were established for reliable differentiation between TSDs, TEDs, BPDs and stacking faults (SF).