Etching composition, a method of determining the etching composition of the silicon material for stressed, the characteristics of the defects on the substrate such processes and is treated with an etching composition the surface or such a distortion, especially

摘要

Not only silicon surface applied stress, the present invention is strained silicon - providing a chromium-free etching composition suitable including insulator, the processing of various silicon-containing surface - one. Hydrofluoric acid, nitric acid, an alkali iodide compounds and acid etching composition with originality and new, according to the present invention, potassium iodide is preferred.