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High Frequency Power Supply with 3.3 kV SiC-MOSFETs for Accelerator Application

机译:用于加速器的带有3.3 kV SiC-MOSFET的高频电源

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摘要

Pulse switching characteristics of newly developed 3.3 kV SiC-MOSFET were investigated and they were provided for a prototype switching power supply (SPS). With supply voltage of 2.5 kV and the load resistor of 100 Ω, rise time T_r and fall time T_f were 76 ns and 88 ns respectively. The SPS exhibited a successful 2.5 kV-20 A-1 MHz burst mode operation.
机译:研究了新开发的3.3 kV SiC-MOSFET的脉冲开关特性,并将其提供给原型开关电源(SPS)。在电源电压为2.5 kV和负载电阻为100Ω的情况下,上升时间T_r和下降时间T_f分别为76 ns和88 ns。 SPS展示了成功的2.5 kV-20 A-1 MHz突发模式操作。

著录项

  • 来源
    《Materials science forum》 |2017年第2017期|685-688|共4页
  • 作者

    Katsuya Okamura; Ken Takayama;

  • 作者单位

    High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki, 305-0801 Japan ,Graduate University for Advanced Studies, Hayama, Kanagawa, 240-0193, Japan;

    High Energy Accelerator Research Organization, 1-1 Oho, Tsukuba, Ibaraki, 305-0801 Japan ,Graduate University for Advanced Studies, Hayama, Kanagawa, 240-0193, Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    pulsed power supply; high repetition; induction accelerator; MOSFET;

    机译:脉冲电源;高重复感应加速器场效应管;

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