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Characterisation of 3.3kV IGCTs for Medium Power Applications

机译:用于中功率应用的3.3kV IGCT的特性

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摘要

The Low Voltage IGCT (3.3kV) is developed to provide a semiconductor able to work at high switching frequencies (>1kHz), preserving its « high current » capacity (4kA). The ultimate goal is to increase the dynamic performances of medium/high power converters, thus extending their application field. To characterise the experimental samples of 3.3kV IGCTs, an opposition method based test bench was developed. This method allows the components to be evaluated at different test conditions in real operation without the need of several megawatt power supplies. Once the samples were characterised, the applicability analysis of these components on specific applications related to the French railway network (SNCF) is performed. Finally, a reactive power compensation application for single-phase systems is studied in detail and a 100kVAR IGCT based set up is built.
机译:低压IGCT(3.3kV)的开发目的是提供一种能够在高开关频率(> 1kHz)下工作的半导体,并保持其“高电流”容量(4kA)。最终目标是提高中/高功率转换器的动态性能,从而扩展其应用领域。为了表征3.3kV IGCT的实验样品,开发了一种基于对立方法的测试台。这种方法允许在实际操作中在不同的测试条件下评估组件,而无需几个兆瓦的电源。表征样品后,将对这些组件在与法国铁路网(SNCF)相关的特定应用中进行适用性分析。最后,详细研究了单相系统的无功补偿应用,并建立了基于100kVAR IGCT的设置。

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