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机译:与N型和P型4H-SiC具有极热稳定性的Ni / W / TaSi_2 / Pt同时欧姆接触
Key Labolatory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics Xidian University;
Key Labolatory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics Xidian University;
Key Labolatory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics xidian university;
Key Labolatory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics Xidian University;
Key Labolatory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics Xidian University;
Ohmic Contact; 4H-SiC; Thermal Stable; Ni/W/TaSisub2/sub/Pt;
机译:在4H-SiC上同时形成n型和P型欧姆触点的热稳定性研究
机译:在低温下在n型和p型4H-SiC上同时形成欧姆触点
机译:使用三元Ni / Ti / Al系统同时形成4H-SiC的p型和n型欧姆接触
机译:极端热稳定的Ni / W / Tasi_2 / PT同时欧姆触点N型和P型4H-SiC
机译:欧姆触点是同性境生长的p型和n型锗
机译:在不同的注入后退火后p型铝注入的4H-SiC层上的欧姆接触
机译:基于Ti 3 sub> SiC 2 sub>阶段,对P型4H-SiC的热稳定欧姆接触。