Reliability and Ruggedness of Planar Silicon Carbide MOSFETs

摘要

The reliability and ruggedness of Monolith/Littelfuse planar SiC MOSFETs have been evaluated using constant voltage time-dependent dielectric breakdown for gate oxide wearout predictions, showing estimated 100 year life at V_(GS)=+25V and T=175C. Using extended time high-temperature gate bias, we have shown 250 mV threshold voltage shifts for 5000 hours under V_(GS)=+25V and negligible threshold voltage shifts for 2500 hours under V_(GS)=-10V, both at T=175C. Under unclamped inductive switching, these 1200V, 80 mOhm SiC MOSFETs survive 1000 mJ of avalanche energy, meeting state-of-art ruggedness for 1200V SiC MOSFETs.