机译:TCAD测量TCAD建模综合4H-SiC的补偿比的测定
Fraunhofer Institute of Integrated Systems and Device Technology (IISB);
Centre of Micro/Nano Manufacturing Technology State Key Laboratory of Precision Measuring Technology & Instruments Tianjin University;
Chair of Electron Devices Friedrich-Alexander-Universität Erlangen;
Fraunhofer Institute of Integrated Systems and Device Technology (IISB);
Centre of Micro/Nano Manufacturing Technology State Key Laboratory of Precision Measuring Technology & Instruments Tianjin University;
Fraunhofer Institute of Integrated Systems and Device Technology (IISB);
Fraunhofer Institute of Integrated Systems and Device Technology (IISB);
Compensation; Al Implantation; Simulation; Technology Computer-Aided Design (TCAD);
机译:高压4H-SIC双极结晶体管的TCAD模型校准
机译:通过霍尔效应测量确定Ga_4Se_3S层状晶体中的载流子有效质量,杂质能级和补偿比
机译:长度依赖性DNA降解动力学模型:DNA示踪浓度测量中的衰变补偿
机译:通过模拟电阻率测量来提取铝植入4H-SiC的活化和补偿比
机译:评估阵列场浓度测量和美国EPA管制模型以确定混合源颗粒物排放
机译:将坐标测量机的误差补偿集成到特征测量中:第一部分—模型开发
机译:果蝇的剂量补偿和性别确定-X / A比的测量机理
机译:人机集成设计与分析系统(mIDas)任务加载模型(TLm)实验与软件详细设计报告