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Microwave-assisted synthesis of Cu doped PbS nanostructures with enhanced dielectric and electrical properties for optoelectronic applications

机译:用于光电应用的增强介质和电性能的微波辅助合成Cu掺杂PBS纳米结构

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摘要

Herein, facile CTAB surfactant-assisted synthesis of Pb_(1-x)Cu_xS (x = 0, 0.1, 0.5,1.0, 2.5 & 5.0 wt%) nanostructures (NSs) via a microwave route within 10 mins was attained and investigated for their structural, optical, vibra-tional, dielectric and electrical properties using X-ray diffraction, FT-Raman, UV-VIS, impedance and I-V measurements. Structural study with Rietveld refinement confirms the synthesis of PbS predominantly with cubic phase; however, at higher content of Cu some CuS peaks are detected. The values crystallite size of all Pb_(1-x)Cu_xS specimens were determined between 19 and 25 nm and the specific surface area between 31 and 40 m~2/g. Vibrational modes are noticed at 59.59, 74.05, 127.04, 268.82, 426.96, 601.49 cm~(-1) in all specimens confirmed cubic PbS NSs synthesis. As received powders were tested through DRS to evaluate the energy gap values via Kubelka-Munk model and noticed between 1.02 ± 0.01 to 1.37 ± 0.01 eV tuned with crystallite size. Dielectric studies reveal that the Cu doping enhanced the capacitance/dielectric constant and ac electrical conductivity of PbS NSs. Moreover, the I-V nature of the prepared Pb_(1-x)Cu_xS NSs was measured, and dc conductivity was calculated and noticed to be enriched with Cu doping. The enhanced dielectric and electrical properties make the prepared materials useful for optoelectronic devices.
机译:在此,通过10分钟内的微波途径获得PB_(1-X)Cu_x(x = 0,0.1,0.5,1.0,2.5,2.5%,2.5&5.0wt%)纳米结构(NSS)的容易CTAB表面活性剂的合成并研究使用X射线衍射,FT-拉曼,UV-Vis,阻抗和IV测量的结构,光学,振动,电性和电性能。具有RIETVELD细化的结构研究证实了主要具有立方阶段的PBS;然而,在较高含量的Cu含量下,一些CUS峰被检测到。所有PB_(1-x)Cu_xs样本的晶级尺寸的值均定在19至25nm之间,并且比31至40m〜2 / g的比表面积。振动模式在59.59,74.05,127.04,268.82,426.04,268.82,206.96,601.49cm〜(-1)中,确认了立方PBS NSS合成。通过DRS通过DRS测试所接收的粉末通过Kubelka-Munk模型评估能量隙值,并注意到用微晶尺寸调整1.02±0.01至1.37±0.01 ev。介电研究表明,Cu掺杂增强了PBS NSS的电容/介电常数和交流电导率。此外,测量制备的PB_(1-X)Cu_xS NSS的I-V特性,并计算DC电导率,并注意到Cu掺杂富含Cu掺杂。增强的电介质和电气性能使制备用于光电器件的制备材料。

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  • 来源
    《Materials Science and Engineering》 |2021年第9期|115268.1-115268.9|共9页
  • 作者单位

    Advanced Functional Materials & Optoelectronics laboratory (AFMOL) Department of Physics Faculty of Science King Khalid University Abha 61413 Saudi Arabia;

    Department of Physics and Nanotechnology SRM Institute of Science and Technology Chengalpattu Tamil Nadu 603 203 India;

    Department of Physics Rayat Shikshan Sanstha's Karmaveer Bhaurao Patil College Vashi Navi Mumbai 400703 India;

    King Abdullah Institute for Nanotechnology King Saud University Riyadh 11451 Saudi Arabia;

    King Abdullah Institute for Nanotechnology King Saud University Riyadh 11451 Saudi Arabia;

    King Abdullah Institute for Nanotechnology King Saud University Riyadh 11451 Saudi Arabia;

    Department of Physics Baba Ghulam Shah Badshah University Rajouri 185234 India;

    Advanced Functional Materials & Optoelectronics laboratory (AFMOL) Department of Physics Faculty of Science King Khalid University Abha 61413 Saudi Arabia Faculty of Science Physics Department Al-Azhar University Assiut 71524 Egypt;

    Advanced Functional Materials & Optoelectronics laboratory (AFMOL) Department of Physics Faculty of Science King Khalid University Abha 61413 Saudi Arabia;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Pb_(1-x)Cu_xS nanostructures; Microwave synthesis; Rietveld refinement; Optical properties; Dielectric properties; Electrical properties;

    机译:PB_(1-X)CU_XS纳米结构;微波合成;RIETVELD改进;光学性质;电介质特性;电气特性;

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