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Facilely synthesized Cu:PbS nanoparticles and their structural, morphological, optical, dielectric and electrical studies for optoelectronic applications

机译:易于合成的Cu:PBS纳米粒子及其结构,形态,光学,光电应用的电介质和电气研究

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In this study, synthesis of pure and Cu doped lead sulfide (PbS) nanoparticles was facilely achieved. The good crystalline nature of the nanoparticles was confirmed via X-ray diffraction (XRD) analysis. Specifically, XRD data was also used to estimate the diffraction planes, lattice constants, size of crystallites, density of dislocations, and strain produced in the lattice. The XRD pattern was indexed after identifying the diffraction planes. The crystallite size was estimated to be in the range of 18-23 nm. The absence of any additional vibrational mode in Raman spectra was observed, and this confirmed the purity of PbS even at a higher Cu doping level. However, the vibrational modes exhibited some shift towards lower wavenumbers. Low dimension nanoparticles morphology and presence of Cu were investigated via scanning electron microscope/Energy Dispersive X-Ray (SEM/EDX) analysis. Additionally, homogeneous Cu doping in final product was observed in an EDX elemental mapping image. Optical measurements were performed by recording diffused reflectance. Both direct energy gap values were estimated in the range of 1.15-1.50 eV, and this significantly exceeded that of the bulk (i.e., 0.41 eV). Dielectric and J-V electrical measurements were performed. The dc conductivity and mobility values were observed extremely high for 2.5% Cu doped PbS NPs [which correspond to 2.48 x 10(-5) S/cm and 1.3 x 10(4) cm(2)/(V s)] when compared to those of pure and other doped PbS NPs.
机译:在该研究中,纯和Cu掺杂硫化铅硫化物(PBS)纳米颗粒的合成被达到。通过X射线衍射(XRD)分析确认纳米颗粒的良好结晶性质。具体地,XRD数据也用于估计衍射平面,晶格常数,微晶尺寸,脱位密度,并在晶格中产生的菌株。识别衍射平面后XRD图案被索引。估计微晶尺寸在18-23nm的范围内。观察到在拉曼光谱中没有任何额外的振动模式,并且即使在较高的Cu掺杂水平下也证实了PBS的纯度。然而,振动模式表现出朝向下波兰的转变。通过扫描电子显微镜/能量分散X射线(SEM / EDX)分析来研究低尺寸纳米颗粒形态和Cu的存在。另外,在EDX元素映射图像中观察到最终产品中的均匀Cu掺杂。通过记录扩散反射率来执行光学测量。直接能隙值估计在1.15-1.50eV的范围内,这显着超过了批量(即0.41eV)。进行电介质和J-V电测量。观察到DC电导率和迁移率值非常高,对于2.5%Cu掺杂PBS NPS [相比,对应于2.48×10(-5)S / cm和1.3×10(4)cm(2)/(v s)]到纯净和其他掺杂的PBS NPS。

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