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Rapid microwave-assisted synthesis of Ag-doped PbS nanoparticles for optoelectronic applications

机译:用于光电应用的A合掺杂PBS纳米粒子的快速微波辅助合成

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Herein, novel Ag-doped PbS (Ag:PbS) nanoparticles (NPs) were synthesized via a facile and rapid microwave route. Field emission scanning electron microscopy (FESEM)/energy-dispersive X-ray (EDX) spectroscopy were employed to confirm the homogeneous doping of Ag in PbS. The transmission electron microscopy (TEM) exposed that the PbS NPs were fully encapsulated with Ag. X-ray diffraction (XRD) analysis revealed that all the samples possessed cubic crystal structures whereas the peak positions for the Ag:PbS were slightly shifted towards lower angle compared to pure PbS, further confirm the Ag doping in NPs. Fourier-transform Raman (FT-Raman) spectra also confirmed the phase and doping of Ag in PbS NPs. The grain sizes of the synthesized NPs were found to be in the range of 15-40 nm while calculated crystallite sizes of these samples were in the range of 18-26 nm. The zeta potential for 5.0 wt% Ag:PbS NPs was found to be approximately 10 times higher than that for pure PbS NPs, signifying the high stability of the doped NPs in aqueous media. The optical band gap of Ag:PbS NPs were evaluated from diffused reflectance spectra and found to be in range of 1.95-2.51 eV; increases with Ag doping. The quenching in photoluminescence (PL) intensity was observed with the increase of Ag doping concentration attributed to the charge transfer between Ag and PbS. Moreover, Ag doping also improve the electrical and dielectric properties of PbS NPs. Finally, optoelectrical properties of synthesized materials were investigated under 633 nm laser-light illumination to determine their applicability as visible-light photodetectors. It was found that the Ag doped PbS NPs exhibited enhanced photodetector figures of merit compared to the pure PbS NPs.
机译:这里,通过容易和快速的微波途径合成新型Ag掺杂的PBS(Ag:PBS)纳米颗粒(NPS)。场发射扫描电子显微镜(FESEM)/能量分散X射线(EDX)光谱法用于确认PBS中Ag的均匀掺杂。透射电子显微镜(TEM)暴露于用Ag完全封装PBS NPS。 X射线衍射(XRD)分析显示,与纯PBS相比,所有样品都具有立方晶体结构,而AG的峰值位置略微向下移至较低角度,进一步证实了NPS中的Ag掺杂。傅立叶变换拉曼(FT-Raman)光谱还证实了PBS NPS中AG的相位和掺杂。发现合成的NP的晶粒尺寸在15-40nm的范围内,而计算的微晶尺寸在这些样品的范围内为18-26nm。 5.0wt%AG的Zeta电位:PBS NPS被发现比纯PBS NP高约10倍,这表示掺杂NPS在水性介质中的高稳定性。 AG的光学带隙:PBS NPS从扩散反射光谱评估,发现为1.95-2.51eV;随着AG掺杂增加。通过增加Ag和PBS之间的电荷转移的Ag掺杂浓度的增加,观察到光致发光(PL)强度的猝灭。此外,AG掺杂还改善了PBS NP的电气和介电性能。最后,在633nm激光照射下研究了合成材料的光电性能,以确定其适用性作为可见光光电探测器。结果发现,与纯PBS NP相比,Ag掺杂的PBS NPS表现出优异的优异的增强光电探测器图。

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