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首页> 外文期刊>Materials Science and Engineering >Synergist effect of potassium periodate and potassium persulfate on improving removal rate of Ruthenium during chemical mechanical polishing
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Synergist effect of potassium periodate and potassium persulfate on improving removal rate of Ruthenium during chemical mechanical polishing

机译:钾碘酸钾和钾过硫酸钾的增效作用提高化学机械抛光过程中钌的去除率

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摘要

As technology nodes continue to decrease, traditional Copper (Cu) interconnects in the back end of the line (BEOL) will encounter more and more problems. Ruthenium (Ru) is expected to be a barrier layer or even as a novel type of interconnection material because of its good electrical properties. However, because of its high chemical inertness, Ru is challenging to achieve a higher removal rate in the chemical mechanical polishing (CMP) process. In this study, the synergist effect of potassium periodate (KIO_4) and potassium persulfate (K_2S_2O_8) on the removal rate of Ru during CMP was investigated. The theory of advanced oxidation process (AOPs) is used to explain the reaction process of Ru with KIO_4 and K_2S_2O_8. X-ray photoelectron spectroscopy (XPS) combined with electrochemical are applied to explore the removal machanism and chemical reaction mechanism of Ru under the synergistic effect of KIO_4 and K_2S_2O_8. The CMP tests shows that the Ru removal rate (1123 A/min) in the presence of KIO_4 and K_2S_2O_8 composite could be increased by more than 221% compared to the removal rate (507 A/min) of KIO_4 alone. In addition, Ru oxidation process is more affected by diffusion-controlled. Excessive oxidant concentration will reduce the removal rate of Ru. The mechanism analysis shows that the RuO_3-activated persulfate generates sulfate radical (SO_4~-·), which can further generate more oxides on the Ru surface, and Ru oxide is easily removed under the CMP process. Therefore, the Ru removal rate will be significantly improved. Simultaneously, the surface roughness Sq can be reduced to 0.667 nm after polishing.
机译:随着技术节点继续减少,线路后端(BEOL)的传统铜(CU)互连将越来越多的问题。钌(Ru)预计是屏障层,甚至是由于其良好的电性能而作为一种新型的互连材料。然而,由于其高化学惰性,Ru挑战,在化学机械抛光(CMP)过程中达到更​​高的去除率。在该研究中,研究了钾周期(KiO_4)和过硫酸钾(K_2S_2O_8)对CMP期间Ru的去除率的协同作用。先进的氧化过程(AOP)理论用于解释Ru用KiO_4和K_2S_2O_8的反应过程。 X射线光电子能谱(XPS)与电化学相结合,探讨了Kio_4和K_2S_2O_8的协同作用下Ru的去除机械和化学反应机理。 CMP测试表明,与单独的KiO_4的去除率(507A / min)相比,KiO_4和K_2S_2O_8复合材料存在下的Ru去除速率(1123a / min)可以增加221%。此外,Ru氧化过程通过扩散控制的影响更大。过量的氧化浓度将降低Ru的去除率。机制分析表明,RuO_3-活化的过硫酸盐产生硫酸盐基团(SO_4〜·),其可以进一步在Ru表面上产生更多氧化物,并且在CMP工艺下容易去除RU氧化物。因此,RU去除率将得到显着改善。同时,在抛光后,表面粗糙度Sq可以减少到0.667nm。

著录项

  • 来源
    《Materials Science and Engineering》 |2020年第12期|114764.1-114764.9|共9页
  • 作者单位

    School of Electronic Information Engineering Hebei University of Technology Tianjin 300130 PR China Tianjin Key Laboratory of Electronic Materials and Devices Tianjin 300130 PR China;

    School of Electronic Information Engineering Hebei University of Technology Tianjin 300130 PR China Tianjin Key Laboratory of Electronic Materials and Devices Tianjin 300130 PR China;

    School of Electronic Information Engineering Hebei University of Technology Tianjin 300130 PR China Tianjin Key Laboratory of Electronic Materials and Devices Tianjin 300130 PR China;

    School of Electronic Information Engineering Hebei University of Technology Tianjin 300130 PR China Tianjin Key Laboratory of Electronic Materials and Devices Tianjin 300130 PR China;

    School of Electronic Information Engineering Hebei University of Technology Tianjin 300130 PR China Tianjin Key Laboratory of Electronic Materials and Devices Tianjin 300130 PR China;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    Ruthenium; Removal rate; Potassium periodate; Potassium persulfate; Sulfate radical; Advanced oxidation process;

    机译:钌;去除率;钾周期;过硫酸钾;硫酸盐自由基;先进的氧化过程;

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