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Field-induced strain of (Pb, La)(Zr, Ti)O_3 epitaxial films grown by metal organic chemical vapor deposition

机译:金属有机化学气相沉积法生长的(Pb,La)(Zr,Ti)O_3外延膜的场致应变

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摘要

Two micrometers thick (Pb, La)(Zr, Ti)O_3 [PLZT] films with wide composition range were epitaxially grown on (100)SrRuO_3 bottom electrode layers epitaxially grown (100) SrTiO_3 substrates by metal organic chemical vapor deposition. Constituent phase of the films were found to be almost the same with the reported phase diagram for the sintered body except for the wider coexistence region of tetragonal and rhombohedral phases. The change of the measured field-induced strain with the electric field was almost respond to the square of the polarization of the films except the negative strain region, but the magnitude was different. This is due to the increase of the electrostatic coefficient of the film with increasing the La/(Pb + La) ratio. As a results, field induced strain of the PLZT film was found to be controlled by adjusting the composition of PLZT films.
机译:通过金属有机化学气相沉积在(100)SrRuO_3底部电极层上外延生长(100)SrTiO_3衬底,外延生长两微米厚的具有宽组成范围的(Pb,La)(Zr,Ti)O_3 [PLZT]薄膜。发现膜的组成相与所报道的烧结体的相图几乎相同,除了四方相和菱形相的较宽的共存区域。除负应变区域外,所测得的场致应变随电场的变化几乎与薄膜极化的平方有关,但幅值不同。这是由于膜的静电系数随La /(Pb + La)比的增加而增加。结果,发现通过调节PLZT膜的组成可以控制PLZT膜的场致应变。

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