首页> 外文期刊>Journal of Applied Physics >Strain-relaxed structure in (001)/(100)-oriented epitaxial Pb(Zr,Ti)O_3 films grown on (100) SrTiO_3 substrates by metal organic chemical vapor deposition
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Strain-relaxed structure in (001)/(100)-oriented epitaxial Pb(Zr,Ti)O_3 films grown on (100) SrTiO_3 substrates by metal organic chemical vapor deposition

机译:通过金属有机化学气相沉积在(100)SrTiO_3衬底上生长的(001)/(100)取向外延Pb(Zr,Ti)O_3薄膜中的应变松弛结构

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摘要

Epitaxial (100)/(001)-oriented tetragonal Pb(Zr,Ti)O_3 films above 1 μm thick were grown on (100)SrTO_3 substrates by pulsed metal organic chemical vapor deposition, and the films with Zr/(Zr+Ti) ratios up to 0.43 were found to have a strain-relaxed domain structure. The domain structure determined by the volume fraction of (001) orientation (mainly decided by the thermal strain above the Curie temperature) and the lattice parameters dependent on the Zr/(Zr+Ti) ratio are explained by a geometrical model consistent with previous results for PbTiO_3 films [J. Appl. Phys. 104, 064121 (2008)].
机译:通过脉冲金属有机化学气相沉积法在(100)SrTO_3衬底上生长了厚度大于1μm的外延(100)/(001)取向的四方Pb(Zr,Ti)O_3薄膜,并形成了Zr /(Zr + Ti)薄膜。比率高达0.43被发现具有应变松弛域结构。由几何模型解释了由(001)取向的体积分数(主要由居里温度以上的热应变决定)和取决于Zr /(Zr + Ti)比的晶格参数确定的畴结构用于PbTiO_3薄膜[J.应用物理104,064121(2008)]。

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  • 来源
    《Journal of Applied Physics》 |2009年第1期|808-812|共5页
  • 作者单位

    Department of Innovative Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Department of Innovative Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Department of Innovative Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Department of Innovative Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Department of Innovative Engineered Materials, Tokyo Institute of Technology, Yokohama 226-8503, Japan;

    Department of Electrical Engineering, National Defense Academy, Yokohama 239, Japan;

    Application Laboratory, Bruker AXS, 3-9-A, Moriya-cho, Kanagawa-ku, Yokohama 221-0022, Japan;

    Application Laboratory, Bruker AXS, 3-9-A, Moriya-cho, Kanagawa-ku, Yokohama 221-0022, Japan;

    Japan Synchrotron Radiation Research Institute (JASRI)/SPring-8, Kouto, Sayo-cho Sayo-gun, Hyogo 679-5198, Japan;

    Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;

    Department of Materials Science and Engineering, Pohang University of Science and Technology, Pohang 790-784, Republic of Korea;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
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  • 正文语种 eng
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