Interaction of 1/3 < 1120 > (0001) edge dislocation with point defect clusters created in displacement cascades in α-zirconium

摘要

Atomic-scale details of the interaction of a 1/3 < 1120 >(0001) edge dislocation, which dissociates in the basal plane, with four typical vacancy and self-interstitial atom (SIA) clusters created by displacement cascades in α-zirconium are investigated by computer modelling. A triangular cluster of SIAs lying within a basal atomic plane adjacent to the dislocation glide plane is not absorbed by the dislocation but is pushed along by the leading partial. A 3-D SIA cluster lying across the glide plane is completely absorbed by the dislocation by creation of two super-jogs. The dislocation also climbs by interaction with a prismatic vacancy cluster, but only half of the vacancies are absorbed in this case. For a cluster formed from a basal platelet of vacancies, the dislocation experiences a glide resistance, but both the line and cluster are fully restored after breakaway. Stress-strain curves and the critical stress for dislocation breakaway from a cluster are presented.