A study on the electrical properties of Pb(Zr, Ti)O_3 thin films crystallized by the electrical resistive heating of Pt thin film

摘要

The electrical properties of Pb(Zr, Ti)O_3 thin films annealed by Pt thin film heater were investigated. By the thin film heater, we successfully crystallized Pb(Zr, Ti)O_3 thin films at a high temperature above 750 ℃ in a few seconds. The thin film heater has some advantages, such as a low thermal budget, little Pb-loss and enhanced surface morphology compared with the conventional furnace because it has a fast heating rate. The electrical properties of the Pb(Zr, Ti)O_3 thin film crystallized by thin film heater improved considerably comparing to those crystallized in conventional furnace. The remanent polarization, breakdown field, and leakage current density measured to be 22.7 μC/cm~2, 853 kV/cm, and 6.93 × 10~(-7) A/cm~2, respectively.