Ultra-low reflection loss for silicon nanowire-array-textured based photovoltaic devices

摘要

A two-step, metal-assisted, electroless etching technique based on the sputtering of silver particles is described, using phosphorus silicate glass, doping, and screen printing processes to fabricate photovoltaic devices. Si-NW arrays on pyramid surfaces show a low reflectivity of similar to 1.11%, while the average length of the Si-NW arrays is similar to 375 nm, with an aspect ratio of similar to 5.4. Superior photovoltaic characteristics of the PCE (similar to 10.26%) with a J(sc) of 28.2 mA/cm(2) and a V-oc of 540 mV are achieved. Power conversion efficiency shows a dependence on shunt resistance while the series resistance and the NWs aspect ratio are respectively below 2.41 Omega and 10. (C) 2016 Elsevier Ltd. All rights reserved.