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Electrochemical growth of CdZnTe thin films

机译:CdZnTe薄膜的电化学生长

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Thin films of Cd_(1-x)Zn_xTe (0.2-1 mu m thick) over a wide compositional range were deposited on CVD grown SnO_2 by a single step electrodeposition technique". The electrochemical bath used in this work consisted of aqueous solutions of Te reacted with nitric acid, CdCl, and ZnCl_2, to which Acetonitrile (CH_3CN) was added to act as a complexing agent. Optical absorption studies, X-ray diffraction (XRD) patterns and scanning electron micrographs (SEM) show that the gram size of the films can be controlled by means of the deposition potential. As the growth potential is varied from -550 to -850 mV (w.r.t. a saturated calomel electrode), the gram size decreases from about one micron to the nanometer range.
机译:通过单步电沉积技术,将宽范围的Cd_(1-x)Zn_xTe薄膜(0.2-1μm厚)沉积在CVD生长的SnO_2上。该工作中使用的电化学浴由Te的水溶液组成与硝酸,CdCl和ZnCl_2反应后,加入乙腈(CH_3CN)作为络合剂,光吸收研究,X射线衍射(XRD)图谱和扫描电子显微照片(SEM)表明,当生长电势从-550到-850 mV(写有饱和甘汞电极)变化时,克大小从大约1微米减小到纳米范围。

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