Grain growth manner of CdZnTe thin film

摘要

Abstract Objective At numerator beam epitaxy modulo, controllability of composition ratioWay it can form the CdZnTe mixed crystal thin film of high quality well,It does. Constitution On substrate, CdTe numerator beam and ZnTe numerator beamWith irradiating with the Te numerator beam, (or, the Cd numerator beam and Zn minuteIrradiating the meridian and the Te numerator beam), the CdZnTe mixed crystal thinThe grow epitaxially it can point to the film. At that time, with VI group elementThe lighting tonnage of certain Te, II group element which consists of Cd and ZnIt makes more than the lighting tonnage. Desirable VI group element and II group elementAs for ratio (VI/II ratio) of lighting tonnage, in 1.02 - 1.3 rangesCertain.