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Microwave sintering of ferroelectric PZT thick films

机译:铁电PZT厚膜的微波烧结

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摘要

An elliptical applicator with a focusing electromagnetic (EM) field is designed to successfully process Pb(Zr, Ti)O_3 (PZT) thick films. The 10 μm-thick PZT film on stainless steel substrate densified by microwave is based on the initial characteristics of PZT particles. Sand-mill milled PZT particles (SMPZT) are inert, but sol-gel-derived particles (SGPZT) readily absorb microwaves. Microwaves also strongly interact with core-shell (CSPZT) films. A dielectric constant of 622 and a tanδ of 4% are achieved following the treatment of CSPZT films. These ferroelectric films exhibit a coercive field of 4 kV/cm and a remanent polarization of 4 μC/cm~2 when applying a microwave power of 500 W-5 min. Microwave sintering shows a rapid densification at low temperatures for ferroelectric films on a metal substrate.
机译:设计具有聚焦电磁(EM)场的椭圆形涂布器,以成功处理Pb(Zr,Ti)O_3(PZT)厚膜。微波致密的不锈钢基板上厚度为10μm的PZT膜基于PZT颗粒的初始特性。砂磨过的PZT颗粒(SMPZT)是惰性的,但溶胶凝胶衍生的颗粒(SGPZT)容易吸收微波。微波还与核壳(CSPZT)膜发生强烈相互作用。经过CSPZT膜处理后,介电常数为622,tanδ为4%。当施加500 W-5 min的微波功率时,这些铁电薄膜的矫顽场为4 kV / cm,剩余极化率为4μC/ cm〜2。微波烧结显示出金属基材上铁电薄膜在低温下的快速致密化。

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