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Stress analysis, dielectric, piezoelectric, and ferroelectric properties of PZT thick films. Fabrication of a 50MHz Tm-pMUT annular array

机译:PZT厚膜的应力分析,介电,压电和铁电性能。 50MHz Tm-pMUT环形阵列的制作

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摘要

PZT films up to 35 μm thick were fabricated, using a composite sol gel route combining a PZTpowder and a PZT sol. The maximum temperature for the process was 710°C. Ademonstration of single layer and multilayer structures was given to show the flexibility of thistechnology. With Stoney’s Equation, studies of the in-situ film stress development as afunction of the film thickness and density was effectuated. It helped to understand that theinternal forces increase considerably with the film thickness and density. This study yields toset up experimental conditions in which a crack free surface finish of a 28μm thick filmrevealed the adaptability of the spin coating technique to fabricate thick films.The wet etching technology revealed the possibility of a great adaptability to pattern andshape innovative devices such as bars 10 μm wide of 21μm PZT thick film. The results openthe way to a wide range of new industrial application requiring small features and/or multilayerPZT thick film with embedded electrodes.The single element and annular array devices have been shown to resonate at approximately60MHz in air and 50 MHz in water. Three types of the composite thick film – 2C+4S, 2C+5Sand 2C+6S – were used to fabricate the Tm-pMUT devices. In each case the most effectivepoling was obtained by maintaining the poling field of 8.4V/μm during cooling from the polingtemperature (200ºC) to ‘freeze’ poled domains in place. This ‘freezing’ was required toprevent the tensile stresses within the film from reorienting the domains at high temperatureswhen the poling field is removed.Increasing values of thickness mode coupling coefficient (kt) were observed with increasinglevels of sol infiltration (decreasing density). Such behaviour is thought to be due to non lineareffects on the piezoelectric coefficient (e33) at high levels of porosity. For very dense thick filmmaterial a kt of 0.47 was observed which is comparable to that observed for the bulk material.
机译:使用结合了PZT粉末和PZT溶胶的复合溶胶凝胶路线,制造了厚度高达35μm的PZT膜。该过程的最高温度为710℃。给出了单层和多层结构的证明,以显示该技术的灵活性。利用Stoney方程,研究了就地膜应力发展与膜厚度和密度的关系。它有助于理解内力随着膜厚度和密度的增加而显着增加。这项研究提供了建立实验条件的条件,其中28μm厚膜的无裂纹表面光洁度揭示了旋涂技术制造厚膜的适应性。湿法刻蚀技术揭示了对图案和形状创新的器件如棒材具有很大适应性的可能性PZT厚膜厚10μm,厚度21μm。该结果为需要小型特征和/或带有嵌入式电极的多层PZT厚膜的广泛新工业应用开辟了道路。单元件和环形阵列器件已显示出在空气中大约60MHz和水中大约50MHz的共振频率。使用三种类型的复合厚膜– 2C + 4S,2C + 5S和2C + 6S来制造Tm-pMUT器件。在每种情况下,通过在从极化温度(200ºC)到“冻结”极化域的冷却过程中保持8.4V /μm的极化场,可以获得最有效的极化。需要进行这种“冻结”以防止膜中的拉伸应力在去除极化场时在高温下重新定向畴。随着溶胶渗透水平的增加(密度降低),观察到厚度模式耦合系数(kt)的值增加。认为这种行为是由于在高孔隙率下对压电系数(e33)的非线性影响所致。对于非常致密的厚膜材料,观察到0.47的kt,与本体材料的kt相当。

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    Dauchy Florent;

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  • 年度 2007
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  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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