Enhancement on effective piezoelectric coefficient d_(33) of B_(3.15)Dy_(0.85)Ti_3O_(12)ferroelectric thin films

摘要

Effects of annealing temperature (600-800 ℃) on microstructure, ferroelectric and piezoelectric properties of B_(3.15)Dy_(0.85)Ti_3O_(12) (BDT) thin films prepared by metal-organic decomposition were studied. The remnant polarization 2P_r and spontaneous polarization 2P_s (16.2μC/cm~2 and 23.3 μC/cm~2 under 690 kV/cm), effective piezoelectric coefficient d_(33) (63 pm/V under the bipolar driving field of 310 kV/cm) of BDT thin film annealed at 700 ℃ are better than those of others. The higher 2P_s and relatively permittivity e_r induced by moderate annealing temperature should be responsible for the enhancement of piezoelectric properties. The improved d_(33) may make BDT a promising candidate for piezoelectric thin film devices.