[Fe_(80)Ni_(20)-O/SiO_2]_n Multilayer thin films for applications in GHz range

摘要

Thin film materials with excellent high-frequency, magnetic and electrical properties are in great demand in modern electromagnetic devices operating in GHz range. In this letter, we fabricated [Fe_(80)Ni_(20)-O/SiO_2]_n multilayer thin films with different SiO_2 interlayer thicknesses (t=0.5-4nm) and fixed Fe_(8o)Ni_(20)-O layer thickness by controlling the sputtering time at room temperature. In these films, the in-plane uniaxial magnetic anisotropy fields can be adjusted in a broad range (from 26 to 107 Oe) by just changing the thickness of each SiO_2 interlayer without applying any inducing field. Excellent high-frequency performances in GHz range have been observed in the typical sample.