机译:反应性射频磁控溅射沉积的(100)取向ZnO:Gd薄膜的光学性质
School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;
School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;
Department of Physics, Southwest University, Chongqing 400715, China;
School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054, China;
Sputtering; Thin films; Luminescence; ZnO; Gd doping;
机译:射频磁控共溅射沉积Zr掺杂ZnO薄膜的结构和光学性能的退火依赖性
机译:射频磁控溅射沉积Cu掺杂ZnO薄膜的表面分析和光学性质
机译:基板温度对射频磁控溅射沉积的GZO / ZnO薄膜的结构,电学和光学性质的影响
机译:溅射功率对通过射频磁控溅射沉积的ZnO / SiO_2膜的结构和光学性质的作用
机译:射频磁控溅射砷化镓薄膜的光学表征。
机译:射频直流和射频叠加直流磁控溅射沉积的透明导电掺铝ZnO多晶薄膜的载流子输运和晶体学取向特征
机译:非反应性射频磁控溅射沉积Ga掺杂ZnO薄膜的缺陷-导电关系的制备与表征