机译:低温离子注入薄膜中Zn离子的传输性质
Nanjing Univ, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China;
Nanjing Univ, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China;
Nanjing Univ, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China;
Nanjing Univ, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China;
Nanjing Univ, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China;
Nanjing Univ, Sch Phys, Collaborat Innovat Ctr Adv Microstruct, Lab Solid State Microstruct, Nanjing 210093, Jiangsu, Peoples R China;
Semiconductors; Superconductors; Zn-doped InN films; Activation energy;
机译:沉积温度对高温ECR-MOCVD在自站立金刚石基材上生长的INN薄膜结构和电学的影响
机译:温度对氧注入形成的绝缘体上硅膜的载流子传输特性的不均匀分析
机译:INN薄膜光学和电气性能的增长温度依赖性
机译:INN薄膜运输特性的温度依赖性
机译:用于增强离子注入薄膜和非晶混合氧化物薄膜晶体管性能的新型低温工艺。
机译:有机无机的制备与性能用低温工艺使用的混合抗反射薄膜中空二氧化硅纳米粒子
机译:液氦温度离子注入后铝薄膜的超导性能