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Low cost nanostructure kesterite CZTS thin films for solar cells application

机译:用于太阳能电池的低成本纳米级星状沸石CZTS薄膜

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摘要

HighlightsNanostructured CZTS thin films grown by SILAR method on glass substrate.The effect of sulfurization on structural growth of the CZTS thin film is studied.CdS quantum dots as a window layer or buffer layer used in solar cell devices.Finally, ITO substrate show 1.68% efficiency compares to FTO substrate shows better 2.08% efficiency.AbstractNanostructure Cu2ZnSnS4(CZTS) thin films were synthesized by Successive Ionic Layer Adsorption and Reaction (SILAR) method. The as-grown CZTS thin films have shown amorphous structure but after sulfurization at 450°C temperature, CZTS thin films showed kesterite crystalline structure. The crystallite size of annealed CZTS thin films is to be ∼18nm and kesterite structure was confirmed by XRD pattern and Raman spectra show pure CZTS peaks at 337cm−1and 368cm−1. The FE-SEM images indicate the presence of small agglomerated grains & visible white pores of as grown and annealed samples. The direct band gap energy of CZTS thin films was decreased after annealing under sulfur atmosphere. CZTS thin films have suitable absorber material for solar cells confirmed by structural, optical and morphological properties. CdS quantum dot has been used as a window layer to deposit on Indium doped tin oxide (ITO) & Fluorine doped tin oxide (FTO) substrates for measured power conversion efficiency of CZTS material confirmed by J-V characteristics.
机译: 突出显示 通过SILAR方法在玻璃基板上生长的纳米结构CZTS薄膜。 < ce:list-item id =“ o0010”> 硫化对CZTS薄膜结构生长的影响 CdS量子点作为太阳能电池设备中使用的窗口层或缓冲层。 最后,ITO基板的效率为1.68% FTO基板显示出更好的2.08%效率。 摘要 纳米结构Cu 2 ZnSnS 4 (CZTS)薄膜是通过连续离子层吸附和反应(SILAR)法合成的。刚生长的CZTS薄膜显示出无定形结构,但在450°C的温度下硫化后,CZTS薄膜显示了钙钛矿晶体结构。退火后的CZTS薄膜的微晶尺寸为〜18nm,并通过XRD图确认了锂斑岩结构,拉曼光谱显示在337cm -1 和368cm处有纯CZTS峰-1 。 FE-SEM图像表明,在生长和退火后的样品中,存在小的团聚颗粒和可见的白色孔隙。在硫气氛下退火后,CZTS薄膜的直接带隙能降低。 CZTS薄膜具有适合的太阳能电池吸收材料,这些吸收材料已通过结构,光学和形态学特性得到证实。 CdS量子点已被用作窗口层,以沉积在掺杂铟的氧化锡(ITO)和掺杂氟的氧化锡(FTO)衬底上,以通过合资特性确定所测量的CZTS材料的功率转换效率。

著录项

  • 来源
    《Materials Letters》 |2018年第1期|92-96|共5页
  • 作者单位

    Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University,Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University,Nanotechnology & Advanced Material Laboratory, Department of Electrical Engineering, Technological-Educational Institute of Patras;

    Nanotechnology & Advanced Material Laboratory, Department of Electrical Engineering, Technological-Educational Institute of Patras;

    Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University;

    Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University;

    Department of Mechanical Engineering, Technological-Educational Institute of Western Greece;

    Thin Film and Nanotechnology Laboratory, Department of Physics, Dr. Babasaheb Ambedkar Marathwada University,Department of Nanotechnology, Dr. Babasaheb Ambedkar Marathwada University;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    CZTS; Kesterite; Sulfurization; Quantum dot; Energy storage and conversion; Multilayer structure;

    机译:CZTS;钾长石;硫化;量子点;储能与转化;多层结构;

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