The correlation of resistivity with the crystal size present in silicon nanowires through confinement based models

摘要

Here we report the nanocrystal size (NCS) of aligned silicon (Si) nanowires (NWs) array fabricated by metal induced chemical etching (MIE) using different resistivity of Si wafer with same etching conditions. Microstructural analysis of SiNWs has been carried out through field emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD). A visible photoluminescence (PL) emission has been observed from the samples under UV excitation at room temperature due to quantum confinement (QC) effect. QC effect has been also analyzed through Raman spectroscopy using red shift and asymmetry ratio of Raman band (around 520 cm-1) observed from SiNWs as compared to its bulk counterpart. A comparative study of NCS of SiNWs present in the sample has been carried out using various QC based models like Brus model, Yorikawa-Muramatsu (Y-M) model and bond-polarizability (BP) model using Raman shift for better understanding of QC phenomenon.