Growth and Characterization of CulnS_2 Thin Films for Photovoltaic Applications

摘要

In this paper, CuInS_(2) thin films were prepared by spray pyrolysis method at different substrate temperatures (T_(s) ). The obtained films were characterized by Raman spectroscopy, UV-Vis spectrophotometer and 4-point probe technique. The results showed thatall of the spray pyrolyzed thin films have chalcopyrite structures. The CuInS_(2) thin films elaborated at 375 °C for 30 min possessing 1.47 eV direct band gap. The observed band gap value for HK-R2 (1.47 eV) is very close to the theoretical band gap value of CuInS_(2).The value of the direct band gap would increase with increasing the substrate temperature. The resistivity of films increases from 5.47 × 10~(–2) to 6.33 × 10~(+1) Ω · cm with the increase in the substrate temperature from 350 °C to 400 °C.For CuInS_(2) thin films, properties like structural, optical and electrical showed progressive behavior with substrate temperature.